NXP Triples Its 65 V LDMOS Offering for RF Power

MRFX Series Expands Application Possibilities for the Growing Smart Industrial Market
MADRID, Spain, Sept. 26, 2018 (GLOBE NEWSWIRE) — (European Microwave Week 2018) – NXP Semiconductors N.V. (NASDAQ:NXPI) today introduced new RF power transistors designed for smart industrial applications, featuring the groundbreaking 65 V laterally diffused metal oxide semiconductor (LDMOS) silicon technology. With more power density, a lower current level and wider safety margins than previous RF power solutions, 65 V LDMOS enables more integrated, highly reliable Industry 4.0 systems that can now leverage the superior level of control that solid state enables, combined with a high degree of energy ma…

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